The Benefits of NAND Flash

What are the benefits of NAND Flash? High storage density, Fast write and erase speed, Durability, Reliability, and Cost are a few of the features that make NAND flash such a popular storage solution. The benefits listed above are not exclusive to NAND Flash though. In fact, this storage option is also used in industrial and consumer electronics products. Read on to learn more about the benefits of NAND Flash. Let’s take a look at some of the top advantages of NAND Flash and how it can benefit your organization.

High storage density

The future of data storage will be dominated by high storage density. The next generation of NAND flash will be able to pack 176 layers in the same space as 64. This will reduce the size of the die by 30% and could lead to a quicker transition to all-flash storage. To find out how these chips can meet your needs, read this article. It will be interesting to see how these new NAND flash chips will change the future of data storage.

The development of NAND flash memory technology continues to increase the number of transistors in a single die. As the cell structure of this type of memory continues to improve, the amount of storage space available will increase. The non-volatile-memory (NVM) chip will also decrease the size of the die. This technology will enable users to store large amounts of data with minimal power consumption. NAND flash memory is already transforming the local storage market. To meet the demands of the industrial sector, special industrial grade NANDs are being developed.

Fast write and erase speeds

Unlike conventional hard disks, NAND flash memory offers very high read and write speeds. Toshiba developed the NAND architecture in 1989. The basic structure of NAND flash is similar to a block device, with a number of pages, typically 512 bytes or 2,048 bytes, respectively. Each page contains error-correcting code checksums that are stored in just a few bytes.

Compared to NOR flash, NAND flash can perform faster write and erase operations. A block of NAND Flash can be erased in less than half the time of a single NOR block. This is because NAND cells have a single substrate, but the Bitlines and Wordlines are powered at the same time. NOR flashes, on the other hand, have much larger blocks than NAND cells. For instance, erasing a 64KB NOR block takes eight hundred milliseconds compared to 128kB in two milliseconds.


When process scaling is reduced, the intrinsic reliability of NAND flash becomes a challenge. Error Correction Code (ECC) capability has become a critical topic in the NAND flash industry. The ECC algorithm must have some theoretical limit in order to operate properly, so any reduction in errors reduces the likelihood of a failure. Adding Dynamic Error Bit Monitoring (D-EBM) to the memory array can improve data health and reliability before the data becomes corrupted.

While TLC and MLC NAND are superior for performance and capacity, their error rates are not equivalent. In fact, the error rates of 24-nm and lower SLC NAND components will be higher. In general, the more reliable the NAND flash memory, the lower the error rates will be. Using the error rate as a guideline, consider the data transfer rates and storage capacity of different NAND flash components and make a decision based on your needs.


Durability of NAND Flash is directly related to the number of program/erase cycles (P/E) performed. NAND Flash SSDs do not have moving parts, but the cell structure and arrangement change over time, so the storage medium will wear out over time. The rated P/E lifetime of NAND Flash depends on the type and size of the storage chip. Several different types of NAND Flash are available, and each has its own benefits and limitations.

In a typical NAND flash memory, the number of write operations is approximately one million. However, the number of erases is far less than that for nor memory. However, NAND memory can have an advantage over nor because it requires only one write operation to erase a block. The block size of a typical NAND memory is eight times smaller than a typical nor memory. However, this advantage is lessened by the fact that NAND memory blocks are removed less often. While this may be a problem, NAND flash memory is still more reliable than nor memory for multimedia information, like music. But if local storage devices are going to store sensitive information, it is better to use a system that has both an EDC/ECC system and a backup method that is less costly.

Micron’s 176-layer 3D NAND

Micron’s i400 microSD card is one of the first 3D NAND flash memory products to be released. While the product has no official release date yet, it is aimed at video security applications. The i400 microSD uses 176-layer 3D NAND flash memory to improve read and write latency by as much as 35%. Micron has not yet released the price of the i400 microSD, but it is expected to hit the market in Q1 2018.

The 176-layer 3D NAND flash memory from Micron features nearly 40 times the layer count of its closest competitor and is the highest-density NAND node on the market. The new memory provides 35 percent more read and write latency, which enhances the performance of applications. Compared to competing solutions, Micron’s new product also features a 30 percent smaller die size, making it ideal for applications with limited space.